![]() RoHS Certificate of Compliance EU Directives 2011/65/EU and 2015/863 restrict the use of the 10 substances below in the manufacture of specified types of electrical equipment. The restricted substances and maximum allowed concentrations in the homogenous material are, by weight:Whilst this restriction does not legally apply to components, it is recognised that component “compliance” is relevant to many customers. RS definition of RoHS Compliance:
The supplier of the item listed below has informed RS Components that the product is “RoHS Compliant”. RS Components has taken all reasonable steps to confirm this statement. Information relates only to products sold on or after the date of this certificate. Compliant product details |
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Order Code | 864-8950 | ||||||||||||||||||||||
Description | ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220 | ||||||||||||||||||||||
Manufacturer/Brand Name | ON Semiconductor | ||||||||||||||||||||||
Manufacturer Part No. | FJP2160DTU | ||||||||||||||||||||||
864-8950 | |
ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220 | |
ON Semiconductor | |
FJP2160DTU |
Date | Dec 7, 2019 |
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum DC Collector Current | 2 A |
Maximum Collector Source Voltage | 2.21V |
Maximum Power Dissipation | 100 W |
Minimum DC Current Gain | 20 |
Mounting Type | Through Hole |
Package Type | TO-220 |
Pin Count | 3 |
Maximum Base Source Voltage | ±20V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Base Current | 1A |
Category | Silicon Transistor |
Dimensions | 9.9 x 4.5 x 15.95mm |
Height | 15.95mm |
Length | 9.9mm |
Minimum Operating Temperature | -55 °C |
Width | 4.5mm |
Maximum Operating Temperature | +125 °C |