ON Semiconductor, FJP2160DTU, Emmitter Switched, NPN Silicon Transistor 2 A 2.21V, 3-Pin TO-220
- RS Stock No. 864-8950
- Mfr. Part No. FJP2160DTU
- Manufacturer ON Semiconductor
ESBC™ Power Transistor, Fairchild Semiconductor
Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
| Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum DC Collector Current | 2 A |
| Maximum Collector Source Voltage | 2.21V |
| Maximum Power Dissipation | 100 W |
| Minimum DC Current Gain | 20 |
| Mounting Type | Through Hole |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Base Source Voltage | ±20V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Base Current | 1A |
| Category | Silicon Transistor |
| Dimensions | 9.9 x 4.5 x 15.95mm |
| Height | 15.95mm |
| Length | 9.9mm |
| Minimum Operating Temperature | -55 °C |
| Width | 4.5mm |
| Maximum Operating Temperature | +125 °C |
