onsemi FJB102TM Dual NPN Digital Transistor, 100 V, 2 + Tab-Pin D2PAK (TO-263)
- RS Stock No.:
- 186-8055
- Mfr. Part No.:
- FJB102TM
- Manufacturer:
- onsemi
On back order for despatch 29/08/2024, delivery within 3 working days
Added
Price Each (In a Pack of 10)
HK$7.465
| Units | Per unit | Per Pack* |
| 10 - 190 | HK$7.465 | HK$74.65 |
| 200 - 390 | HK$7.279 | HK$72.79 |
| 400 + | HK$7.167 | HK$71.67 |
| *price indicative | ||
- RS Stock No.:
- 186-8055
- Mfr. Part No.:
- FJB102TM
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
FJB102: 100V High Voltage Power Darlington Transistor
High DC Current Gain : hFE=1000 @ VCE= 4 V, IC= 3 A (Min.)
Low Collector-Emitter Saturation Voltage
High Collector-Emitter Sustaining Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
Industrial Use
Applications
This product is general usage and suitable for many different applications.
Low Collector-Emitter Saturation Voltage
High Collector-Emitter Sustaining Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
Industrial Use
Applications
This product is general usage and suitable for many different applications.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Collector Emitter Voltage | 100 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 80 W |
| Minimum DC Current Gain | 200 |
| Transistor Configuration | Dual |
| Maximum Emitter Base Voltage | 5 V |
| Pin Count | 2 + Tab |
| Number of Elements per Chip | 2 |
| Dimensions | 10.67 x 9.65 x 4.58mm |
| Maximum Operating Temperature | +150 °C |