- RS Stock No.:
- 186-7368
- Mfr. Part No.:
- BDX53BG
- Manufacturer:
- onsemi
On back order for despatch 02/08/2024, delivery within 3 working days
Added
Price Each (In a Tube of 50)
HK$6.232
Units | Per unit | Per Tube* |
50 - 50 | HK$6.232 | HK$311.60 |
100 - 150 | HK$6.045 | HK$302.25 |
200 + | HK$5.864 | HK$293.20 |
*price indicative |
- RS Stock No.:
- 186-7368
- Mfr. Part No.:
- BDX53BG
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available
Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Transistor Type | NPN |
Maximum Collector Emitter Voltage | 80 V dc |
Package Type | TO-220 |
Mounting Type | Through Hole |
Maximum Power Dissipation | 65 W |
Transistor Configuration | Single |
Maximum Emitter Base Voltage | 5 V dc |
Pin Count | 3 |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Dimensions | 10.53 x 4.83 x 9.28mm |