ON Semiconductor, BDX53BG

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.

High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Pb-Free Packages are Available

Specifications
Attribute Value
Transistor Type NPN
Number of Elements per Chip 1
Maximum Continuous Collector Current 8 A
Maximum Collector Emitter Voltage 80 V dc
Mounting Type Through Hole
Package Type TO-220
Pin Count 3
Minimum DC Current Gain 750
Transistor Configuration Single
Maximum Power Dissipation 65 W
Maximum Collector Emitter Saturation Voltage 4 V dc
Maximum Emitter Base Voltage 5 V dc
Configuration Single
Length 10.53mm
Maximum Operating Temperature +150 °C
Dimensions 10.53 x 4.83 x 9.28mm
Height 9.28mm
Width 4.83mm
Minimum Operating Temperature -65 °C
Maximum Base Emitter Saturation Voltage 2.5 V dc
350 In stock for delivery within 3 working days
Price Each (In a Tube of 50)
HK$ 6.494
(exc. GST)
units
Per unit
Per Tube*
50 - 200
HK$6.494
HK$324.70
250 - 450
HK$5.193
HK$259.65
500 - 1200
HK$4.589
HK$229.45
1250 - 2450
HK$3.619
HK$180.95
2500 +
HK$3.271
HK$163.55
*price indicative