ON Semiconductor, NDS351N

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

1.1A, 30V. RDS(ON) = 0.25Ω @ VGS= 4.5 V.
Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface mount package.
This product is general usage and suitable for many different applications.

Attribute Value
Number of Elements per Chip 1
Mounting Type Surface Mount
Package Type SOT-23
Pin Count 3
Maximum Power Dissipation 500 mW
Transistor Configuration Single
Configuration Single
Minimum Operating Temperature -55 °C
Width 1.4mm
Dimensions 3.04 x 1.4 x 1.01mm
Length 3.04mm
Maximum Operating Temperature +150 °C
Height 1.01mm
On back order for despatch 11/03/2020, delivery within 3 working days
Price Each (On a Reel of 3000)
HK$ 1.384
(exc. GST)
Per unit
Per Reel*
3000 - 3000
6000 - 6000
9000 +
*price indicative
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