onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA
- RS Stock No.:
- 862-4954
- Mfr. Part No.:
- MJ11012G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
38 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 2)
HK$67.115
| Units | Per unit | Per Pack* |
| 2 - 24 | HK$67.115 | HK$134.23 |
| 26 - 48 | HK$65.44 | HK$130.88 |
| 50 + | HK$64.43 | HK$128.86 |
| *price indicative | ||
- RS Stock No.:
- 862-4954
- Mfr. Part No.:
- MJ11012G
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 60 V |
| Maximum Emitter Base Voltage | 5 V |
| Package Type | TO-204AA |
| Mounting Type | Through Hole |
| Pin Count | 2 |
| Transistor Configuration | Single |
| Number of Elements per Chip | 2 |
| Minimum DC Current Gain | 200 |
| Maximum Base Emitter Saturation Voltage | 5 V |
| Maximum Collector Base Voltage | 60 V |
| Maximum Collector Emitter Saturation Voltage | 4 V |
| Minimum Operating Temperature | -55 °C |
| Maximum Power Dissipation | 200 W |
| Dimensions | 21.08 (Dia.) x 8.51mm |
| Height | 8.51mm |
| Maximum Operating Temperature | +200 °C |