onsemi TIP121G NPN Darlington Transistor, 5 A dc 80 V dc HFE:1000, 3-Pin TO-220
- RS Stock No.:
- 186-8205
- Mfr. Part No.:
- TIP121G
- Manufacturer:
- onsemi
On back order for despatch 29/07/2024, delivery within 3 working days
Added
Price Each (In a Pack of 25)
HK$6.176
| Units | Per unit | Per Pack* |
| 25 - 100 | HK$6.176 | HK$154.40 |
| 125 + | HK$6.102 | HK$152.55 |
| *price indicative | ||
- RS Stock No.:
- 186-8205
- Mfr. Part No.:
- TIP121G
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN), TIP125, TIP126, TIP127 (PNP) are complementary devices.
High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage @ 100 mA
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
VCEO(sus) = 80 Vdc (Min) TIP121, TIP126
VCEO(sus) = 100 Vdc (Min) TIP122, TIP127
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Collector-Emitter Sustaining Voltage @ 100 mA
VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
VCEO(sus) = 80 Vdc (Min) TIP121, TIP126
VCEO(sus) = 100 Vdc (Min) TIP122, TIP127
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 5 A dc |
| Maximum Collector Emitter Voltage | 80 V dc |
| Maximum Emitter Base Voltage | 5 V dc |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Configuration | Single |
| Transistor Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 1000 |
| Maximum Collector Base Voltage | 80 V dc |
| Maximum Collector Emitter Saturation Voltage | 4 V dc |
| Minimum Operating Temperature | -65 °C |
| Maximum Power Dissipation | 65 W |
| Height | 15.75mm |
| Maximum Operating Temperature | +150 °C |
| Width | 4.83mm |
| Length | 10.53mm |
| Dimensions | 10.53 x 4.83 x 15.75mm |