onsemi MJ11032G 1 Darlington Transistor NPN, 50 A 120 V HFE:400, 2-Pin TO-204
- RS Stock No.:
- 125-0063
- Mfr. Part No.:
- MJ11032G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tray of 100 units)*
HK$8,375.80
Add 100 units to get free delivery
Temporarily out of stock
- 300 unit(s) shipping from 25 February 2026
- Plus 200 unit(s) shipping from 01 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 100 - 100 | HK$83.758 | HK$8,375.80 |
| 200 - 300 | HK$81.937 | HK$8,193.70 |
| 400 + | HK$80.116 | HK$8,011.60 |
*price indicative
- RS Stock No.:
- 125-0063
- Mfr. Part No.:
- MJ11032G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Darlington Transistor | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 120V | |
| Package Type | TO-204 | |
| Mount Type | Through Hole | |
| Pin Count | 2 | |
| Number of Elements per Chip | 1 | |
| Minimum DC Current Gain hFE | 400 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Series | MJ11032 | |
| Width | 26.67 mm | |
| Height | 8.51mm | |
| Length | 38.86mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Darlington Transistor | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 120V | ||
Package Type TO-204 | ||
Mount Type Through Hole | ||
Pin Count 2 | ||
Number of Elements per Chip 1 | ||
Minimum DC Current Gain hFE 400 | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Collector Base Voltage VCBO 120V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Series MJ11032 | ||
Width 26.67 mm | ||
Height 8.51mm | ||
Length 38.86mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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