ON Semi MJ11015G PNP Darlington Pair, 30 A 120 V HFE:200, 3-Pin TO-204

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CZ
Product Details

PNP Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11015G is a 30A, 120V PNP Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11015G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• PNP Polarity

Versions Available:
688-1502 - pack of 2
103-5055 - tray of 100

Specifications
Attribute Value
Transistor Type PNP
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 120 V
Maximum Emitter Base Voltage 5 V
Package Type TO-204
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Number of Elements per Chip 1
Minimum DC Current Gain 200
Maximum Base Emitter Saturation Voltage 5 V
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 4 V
Width 26.67mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +200 °C
Height 8.51mm
Dimensions 39.37 x 26.67 x 8.51mm
Length 39.37mm
200 In stock for delivery within 3 working days
Price Each (In a Tray of 100)
HK$ 33.248
(exc. GST)
units
Per unit
Per Tray*
100 - 100
HK$33.248
HK$3,324.80
200 - 300
HK$32.583
HK$3,258.30
400 - 900
HK$31.931
HK$3,193.10
1000 +
HK$31.293
HK$3,129.30
*price indicative
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