Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Attribute | Value |
---|---|
Transistor Type | PNP |
Maximum DC Collector Current | 800 mA |
Maximum Collector Emitter Voltage | 60 V |
Package Type | TO-92 |
Mounting Type | Through Hole |
Maximum Power Dissipation | 625 mW |
Minimum DC Current Gain | 50 |
Transistor Configuration | Single |
Maximum Collector Base Voltage | 60 V |
Maximum Emitter Base Voltage | 5 V |
Pin Count | 3 |
Number of Elements per Chip | 1 |
Width | 4.19mm |
Maximum Collector Emitter Saturation Voltage | 1.6 V |
Length | 5.2mm |
Maximum Base Emitter Saturation Voltage | 2.6 V |
Maximum Operating Temperature | +150 °C |
Height | 5.33mm |
Minimum Operating Temperature | -55 °C |
Dimensions | 5.2 x 4.19 x 5.33mm |