Nexperia PBSS4240Y,115 NPN Transistor, 2 A, 40 V, 6-Pin UMT

  • RS Stock No. 168-9634
  • Mfr. Part No. PBSS4240Y,115
  • Manufacturer Nexperia
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 2 A
Maximum Collector Emitter Voltage 40 V
Package Type UMT
Mounting Type Surface Mount
Maximum Power Dissipation 430 mW
Minimum DC Current Gain 150
Transistor Configuration Single
Maximum Collector Base Voltage 40 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 230 MHz
Pin Count 6
Number of Elements per Chip 1
Maximum Collector Emitter Saturation Voltage 0.32 V
Maximum Base Emitter Saturation Voltage 1.1 V
Minimum Operating Temperature -65 °C
Width 1.35mm
Maximum Operating Temperature +150 °C
Length 2.2mm
Dimensions 1 x 2.2 x 1.35mm
Height 1mm
On back order for despatch 28/01/2020, delivery within 3 working days
Price Each (On a Reel of 3000)
HK$ 0.933
(exc. GST)
units
Per unit
Per Reel*
3000 +
HK$0.933
HK$2,799.00
*price indicative
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