ON Semi NST65011MW6T1G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Dual Matched Bipolar Transistors, ON Semiconductor

Pairs of NPN or PNP bipolar transistors in a single package matched for Base-Emitter voltage (VBE) and Current Gain (hFE).

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 100 mA
Maximum Collector Emitter Voltage 65 V
Package Type SOT-363 (SC-88)
Mounting Type Surface Mount
Maximum Power Dissipation 380 mW
Minimum DC Current Gain 150
Transistor Configuration Isolated
Maximum Collector Base Voltage 80 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 100 MHz
Pin Count 6
Number of Elements per Chip 2
Width 1.35mm
Minimum Operating Temperature -55 °C
Dimensions 2.2 x 1.35 x 1mm
Maximum Collector Emitter Saturation Voltage 600 mV
Maximum Base Emitter Saturation Voltage 950 mV
Height 1mm
Length 2.2mm
Maximum Operating Temperature +150 °C
6000 In stock for delivery within 3 working days
Price Each (On a Reel of 3000)
HK$ 0.644
(exc. GST)
units
Per unit
Per Reel*
3000 +
HK$0.644
HK$1,932.00
*price indicative