JFETs

JFETs A JFET is a four terminal device, the terminals are called gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs an N-Channel & P-Channel.What does JFET stand for? JFET stands for junction field-effect transistorN-Channel JFET ConstructionThe name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.P-Channel JFET ConstructionThe name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.Features and Benefits High input impedance Voltage controlled device High degree of isolation between the input and the output Less noiseWhat are they also known as? JUGFETWhat are JFET transistors used for? JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.What is the difference between a JFET & BJT (Bipolar Junction Transistor)? The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carrier flows.What is doping of semiconductors? Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.

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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 169-7867
Mfr. Part No.DSK5J01P0L
BrandPanasonic
HK$1.49
Each (On a Reel of 3000)
units
N 1 → 3mA - - -55V Single Single - Surface Mount SMini3 F2 B 3 - - 2 x 1.25 x 0.8mm
RS Stock No. 166-0535
Mfr. Part No.BF510,215
BrandNXP
HK$2.499
Each (On a Reel of 3000)
units
N 0.7 → 3.0mA 20 V - 20V Single Single - Surface Mount SOT-23 (TO-236AB) 3 - - 3 x 1.4 x 1mm
RS Stock No. 806-4251
Mfr. Part No.MMBF4093
HK$2.29
Each (In a Pack of 50)
units
N Min. 8mA 0.2 V -40 V 40V Single Single 80 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 166-3085
Mfr. Part No.MMBF5103
HK$0.712
Each (On a Reel of 3000)
units
N 10 → 40mA 20 V -40 V 40V Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 1.04mm
RS Stock No. 162-9314
Mfr. Part No.CPH6904-TL-E
HK$2.411
Each (On a Reel of 3000)
units
N 20 → 40mA 25 V - -25V Dual Common Source - Surface Mount CPH 6 6pF 2.3pF 2.9 x 1.6 x 0.9mm
RS Stock No. 625-5745
Mfr. Part No.MMBFJ310LT1G
HK$3.94
Each (In a Pack of 5)
units
N 24 → 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 800-9364
Mfr. Part No.2SK3666-2-TB-E
HK$1.675
Each (In a Pack of 100)
units
N 0.6 → 1.5mA 30 V - -30V Single Single 200 Ω Surface Mount SOT-23 3 - - 2.9 x 1.5 x 1.1mm
RS Stock No. 2508955453
Mfr. Part No.NTE466
HK$60.34
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RS Stock No. 2508963606
Mfr. Part No.NTE312
HK$22.32
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RS Stock No. 2508956507
Mfr. Part No.NTE451
HK$17.50
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RS Stock No. 2508963612
Mfr. Part No.NTE457
HK$13.86
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RS Stock No. 2508963583
Mfr. Part No.NTE133
HK$39.34
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