JFETs

A JFET is a four-terminal device, the terminals are called the gate, drain, source and body. The body terminal is always connected to the source. There are two types of JFETs and N-Channel P-Channel. FET stands for junction field-effect transistor. They can also be referred to as a JUGFET

N-Channel JFET Construction

The name N-Channel signifies that the electrons are the majority charge carriers. To form the N-Channel an N type semiconductor is used as a base and doped with a P type semiconductor at both ends. Both these P regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

P-Channel JFET Construction

The name P channel signifies that the holes are the majority charge carriers. To form the P-Channel a P type semiconductor is used as a base and doped with an N type semiconductor at both ends. Both these N regions are electrically linked together with an ohmic contact at the gate. Two further terminals are taken out at the opposite ends for the drain and the source.

Features and Benefits

  • High input impedance
  • Voltage-controlled device
  • A high degree of isolation between the input and the output
  • Less noise

What are JFET transistors used for?

JFET transistors have many applications in electronics and communication. You can use them as an electronically controlled switch to control electric power to a load, and as amplifiers.

What is the difference between a JFET and BJT (Bipolar Junction Transistor)?

The main difference between a JFET and BJT is a field effect transistor only majority charge carrier flows while the BJT (bipolar transistor) offers both majority and minority charge carriers flow.

What is the doping of semiconductors?

Doping is the process of including foreign impurities to intrinsic semiconductors to change their electrical properties. Trivalent atoms used to dope silicon cause an intrinsic semiconductor to become a P-Type semiconductor. Pentavalent used to dope silicon cause an intrinsic semiconductor to become an N-Type semiconductor.


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Description Price Channel Type Idss Drain-Source Cut-off Current Maximum Drain Source Voltage Maximum Gate Source Voltage Maximum Drain Gate Voltage Configuration Transistor Configuration Maximum Drain Source Resistance Mounting Type Package Type Pin Count Drain Gate On-Capacitance Source Gate On-Capacitance Dimensions
RS Stock No. 163-2020
Mfr. Part No.2SK3557-6-TB-E
HK$1.303
Each (On a Reel of 3000)
units
N 10 to 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 792-5164
Mfr. Part No.2SK3557-6-TB-E
HK$3.003
Each (In a Pack of 25)
units
N 10 to 20mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 806-1757
Mfr. Part No.J112
HK$2.955
Each (In a Pack of 50)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 124-1385
Mfr. Part No.J112
HK$1.061
Each (In a Bag of 1000)
units
N Min. 5mA - -35 V 35V Single Single 50 Ω Through Hole TO-92 3 28pF 28pF 5.2 x 4.19 x 5.33mm
RS Stock No. 864-7840
Mfr. Part No.MMBFJ175LT1G
HK$3.874
Each (In a Pack of 25)
units
P -7 to -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11pF 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 163-0037
Mfr. Part No.MMBFJ175LT1G
HK$1.023
Each (On a Reel of 3000)
units
P -7 to -60mA 15 V - -25V Single Single 125 Ω Surface Mount SOT-23 3 11pF 11pF 3.04 x 1.4 x 1.01mm
RS Stock No. 806-1750
Mfr. Part No.J109
HK$3.413
Each (In a Pack of 25)
units
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 792-5173
Mfr. Part No.2SK932-23-TB-E
HK$3.717
Each (On a Tape of 25)
units
N 10 to 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 792-5161
Mfr. Part No.2SK3666-3-TB-E
HK$3.255
Each (In a Pack of 50)
units
N 1.2 to 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS Stock No. 166-2021
Mfr. Part No.J109
HK$1.638
Each (In a Bag of 1000)
units
N Min. 40mA - -25 V 25V Single Single 12 Ω Through Hole TO-92 3 85pF 85pF 4.58 x 3.86 x 4.58mm
RS Stock No. 163-2024
Mfr. Part No.2SK932-23-TB-E
HK$1.092
Each (On a Reel of 3000)
units
N 10 to 17mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 3pF 2.9 x 1.5 x 1.1mm
RS Stock No. 145-4162
Mfr. Part No.2SK3666-3-TB-E
HK$0.826
Each (On a Reel of 3000)
units
N 1.2 to 3mA 30 V - -30V Single Single 200 Ω Surface Mount CP 3 4pF 1.1pF 2.9 x 1.5 x 1.1mm
RS Stock No. 806-4251
Mfr. Part No.MMBF4093
HK$2.961
Each (In a Pack of 50)
units
N Min. 8mA 0.2 V -40 V 40V Single Single 80 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm
RS Stock No. 792-5167
Mfr. Part No.2SK3557-7-TB-E
HK$3.707
Each (In a Pack of 20)
units
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 163-2021
Mfr. Part No.2SK3557-7-TB-E
HK$0.962
Each (On a Reel of 3000)
units
N 16 to 32mA 15 V - -15V Single Single - Surface Mount CP 3 10pF 2.9pF 2.9 x 1.5 x 1.1mm
RS Stock No. 170-3357
Mfr. Part No.MMBFJ310LT1G
HK$1.051
Each (On a Reel of 3000)
units
N 24 to 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 864-7846
Mfr. Part No.MMBF4393LT1G
HK$3.035
Each (In a Pack of 50)
units
N 5 to 30mA 30 V +30 V 30V Single Single 100 Ω Surface Mount SOT-23 3 14pF 14pF 3.04 x 1.4 x 1.01mm
RS Stock No. 625-5745
Mfr. Part No.MMBFJ310LT1G
HK$3.966
Each (In a Pack of 5)
units
N 24 to 60mA 25 V +25 V - Single Single - Surface Mount SOT-23 3 - - 2.9 x 1.3 x 0.94mm
RS Stock No. 162-9314
Mfr. Part No.CPH6904-TL-E
HK$2.724
Each (On a Reel of 3000)
units
N 20 to 40mA 25 V - -25V Dual Common Source - Surface Mount CPH 6 6pF 2.3pF 2.9 x 1.6 x 0.9mm
RS Stock No. 166-3094
Mfr. Part No.MMBFJ176
HK$1.302
Each (On a Reel of 3000)
units
P -2 to -25mA 15 V +30 V -30V Single Single 250 Ω Surface Mount SOT-23 3 - - 2.92 x 1.3 x 0.93mm