N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002
- RS Stock No.:
- 671-0312
- Mfr. Part No.:
- 2N7002
- Manufacturer:
- onsemi
420 In HK stock for delivery within 1 working day(s)
2540 In Global stock for delivery within 3 working day(s)
Added
Price Each (In a Pack of 20)
HK$2.527
| Units | Per unit | Per Pack* |
| 20 - 740 | HK$2.527 | HK$50.54 |
| 760 - 1480 | HK$2.483 | HK$49.66 |
| 1500 + | HK$2.438 | HK$48.76 |
| *price indicative | ||
- RS Stock No.:
- 671-0312
- Mfr. Part No.:
- 2N7002
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 115 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7.5 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 200 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 2.92mm |
| Maximum Operating Temperature | +150 °C |
| Width | 1.3mm |
| Transistor Material | Si |
| Height | 0.93mm |
| Minimum Operating Temperature | -55 °C |