- RS Stock No.:
- 911-4798
- Mfr. Part No.:
- IKW50N60TFKSA1
- Manufacturer:
- Infineon
240 In stock for delivery within 3 working days
Added
Price Each (In a Tube of 30)
HK$42.399
Units | Per unit | Per Tube* |
30 - 30 | HK$42.399 | HK$1,271.97 |
60 - 90 | HK$41.477 | HK$1,244.31 |
120 + | HK$40.555 | HK$1,216.65 |
*price indicative |
- RS Stock No.:
- 911-4798
- Mfr. Part No.:
- IKW50N60TFKSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- DE
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 100 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 333 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Dimensions | 16.03 x 21.1 x 5.16mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -40 °C |