Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 897-7185
Mfr. Part No.:: IKW30N60TFKSA1
Manufacturer:: Infineon

Infineon IKW30N60TFKSA1 IGBT, 45 A 600 V, 3-Pin TO-247, Through Hole

On back order for despatch 21/04/2026, delivery within 3 working days

Added

Price Each (In a Pack of 2)

HK$38.815

Units	Per unit	Per Pack*
2 +	HK$38.815	HK$77.63
*price indicative

RS Stock No.:: 897-7185
Mfr. Part No.:: IKW30N60TFKSA1
Manufacturer:: Infineon

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	45 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	187 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	16.13 x 5.21 x 21.1mm
Gate Capacitance	1630pF
Maximum Operating Temperature	+175 °C
Energy Rating	2.1mJ
Minimum Operating Temperature	-40 °C