- RS Stock No.:
- 864-8782
- Mfr. Part No.:
- FGA40N65SMD
- Manufacturer:
- onsemi
22 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 2)
HK$33.405
Units | Per unit | Per Pack* |
2 - 6 | HK$33.405 | HK$66.81 |
8 - 14 | HK$32.57 | HK$65.14 |
16 + | HK$32.075 | HK$64.15 |
*price indicative |
- RS Stock No.:
- 864-8782
- Mfr. Part No.:
- FGA40N65SMD
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 349 W |
Package Type | TO-3PN |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.2 x 5 x 20.1mm |
Maximum Operating Temperature | +175 °C |
Minimum Operating Temperature | -55 °C |