- RS Stock No.:
- 799-4867
- Mfr. Part No.:
- GT30J341,Q(O
- Manufacturer:
- Toshiba
90 In stock for delivery within 3 working days
Added
Price Each
HK$38.49
Units | Per unit |
1 - 19 | HK$38.49 |
20 - 49 | HK$36.96 |
50 - 99 | HK$35.41 |
100 + | HK$34.64 |
- RS Stock No.:
- 799-4867
- Mfr. Part No.:
- GT30J341,Q(O
- Manufacturer:
- Toshiba
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 59 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 230 W |
Package Type | TO-3PN |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.5 x 4.5 x 20mm |
Maximum Operating Temperature | +175 °C |