onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

RS Stock No.:: 185-8956
Mfr. Part No.:: FGAF40S65AQ
Manufacturer:: onsemi

onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

801 In stock for delivery within 3 working days

Added

Price Each (In a Pack of 3)

HK$27.193

Units	Per unit	Per Pack*
3 - 87	HK$27.193	HK$81.579
90 - 177	HK$26.517	HK$79.551
180 +	HK$26.107	HK$78.321
*price indicative

RS Stock No.:: 185-8956
Mfr. Part No.:: FGAF40S65AQ
Manufacturer:: onsemi

Product overview and Technical data sheets

Datasheet FGAF40S65AQ

Legislation and Compliance

Non Compliant

COO (Country of Origin):: KR

Product Details

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.

Maximum junction temperature : TJ = 175°C
Positive temperaure co-efficient for easy parallel operating
High current capability
Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A
High input impedance
100% of the Parts tested for ILM
Fast switching
Tightened parameter distribution
IGBT with monolithic reverse conducting diode
Applications
Consumer Appliances
PFC, Welder
Industrial application

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	94 W
Number of Transistors	1
Package Type	TO-3PF
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	15.7 x 5.7 x 24.7mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+175 °C
Energy Rating	325mJ
Gate Capacitance	2590pF