STMicroelectronics STGF20H60DF IGBT, 40 A 600 V, 3-Pin TO-220FP, Through Hole

RS Stock No.:: 168-7066
Mfr. Part No.:: STGF20H60DF
Manufacturer:: STMicroelectronics

STMicroelectronics STGF20H60DF IGBT, 40 A 600 V, 3-Pin TO-220FP, Through Hole

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Added

Price Each (In a Tube of 50)

HK$16.215

Units	Per unit	Per Tube*
50 - 50	HK$16.215	HK$810.75
100 - 450	HK$15.862	HK$793.10
500 +	HK$14.276	HK$713.80
*price indicative

RS Stock No.:: 168-7066
Mfr. Part No.:: STGF20H60DF
Manufacturer:: STMicroelectronics

Product overview and Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

IGBT Discretes, STMicroelectronics

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IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications

Attribute	Value
Maximum Continuous Collector Current	40 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	167 W
Package Type	TO-220FP
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	10.4 x 4.6 x 15.75mm
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+175 °C