IXYS IXGP20N120B3 IGBT, 80 A 1200 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 146-1730
- Mfr. Part No.:
- IXGP20N120B3
- Manufacturer:
- IXYS
On back order for despatch 04/10/2024, delivery within 3 working days
Added
Price Each (In a Tube of 50)
HK$40.765
| Units | Per unit | Per Tube* |
| 50 - 50 | HK$40.765 | HK$2,038.25 |
| 100 - 150 | HK$39.879 | HK$1,993.95 |
| 200 + | HK$38.992 | HK$1,949.60 |
| *price indicative | ||
- RS Stock No.:
- 146-1730
- Mfr. Part No.:
- IXGP20N120B3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 180 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 20kHz |
| Transistor Configuration | Single |
| Dimensions | 10.66 x 4.83 x 16mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |