IXYS IXGH72N60B3 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 146-1728
- Mfr. Part No.:
- IXGH72N60B3
- Manufacturer:
- IXYS
Discontinued product
- RS Stock No.:
- 146-1728
- Mfr. Part No.:
- IXGH72N60B3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
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IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 75 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 540 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 40kHz |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.46mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |