Infineon IKW30N65ES5XKSA1 IGBT, 62 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 144-1201
- Mfr. Part No.:
- IKW30N65ES5XKSA1
- Manufacturer:
- Infineon
30 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 10)
HK$28.088
| Units | Per unit | Per Pack* |
| 10 - 10 | HK$28.088 | HK$280.88 |
| 20 - 20 | HK$27.597 | HK$275.97 |
| 30 + | HK$27.091 | HK$270.91 |
| *price indicative | ||
- RS Stock No.:
- 144-1201
- Mfr. Part No.:
- IKW30N65ES5XKSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 62 A |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Gate Emitter Voltage | ±20 V, ±30V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 188 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 30kHz |
| Transistor Configuration | Single |
| Dimensions | 16.13 x 5.21 x 21.1mm |
| Minimum Operating Temperature | -40 °C |
| Energy Rating | 0.88mJ |
| Gate Capacitance | 1800pF |
| Maximum Operating Temperature | +175 °C |