IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 192-988
- Mfr. Part No.:
- IXGH40N120B2D1
- Manufacturer:
- IXYS
18 In stock for delivery within 3 working days
Added
Price Each
HK$164.98
| Units | Per unit |
| 1 - 7 | HK$164.98 |
| 8 - 14 | HK$160.86 |
| 15 + | HK$158.39 |
- RS Stock No.:
- 192-988
- Mfr. Part No.:
- IXGH40N120B2D1
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 75 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.46mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |