Fairchild Semiconductor
Fairchild FDMS3660AS Dual N-channel MOSFET, 56 A, 130 A, 30 V PowerTrench, 8-Pin Power 56
Product Details

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer an increase in system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and a soft reverse recovery body diode, which contribute towards fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, Fairchild Semiconductor

Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
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Channel TypeN
Maximum Continuous Drain Current56 A, 130 A
Maximum Drain Source Voltage30 V
Maximum Drain Source Resistance2.7 mΩ, 11 mΩ
Minimum Gate Threshold Voltage1.1V
Maximum Gate Source Voltage±12 (Q2) V, ±20 (Q1) V
Package TypePower 56
Mounting TypeSurface Mount
Transistor ConfigurationSeries
Pin Count8
Channel ModeEnhancement
CategoryPower MOSFET
Maximum Power Dissipation2.2 W, 2.5 W
Length5mm
Typical Gate Charge @ Vgs21 nC @ 10 V, 64 nC @ 10 V
Typical Input Capacitance @ Vds1485 pF@ 15 V, 4150 pF@ 15 V
Width5.9mm
Number of Elements per Chip2
Minimum Operating Temperature-55 °C
Dimensions5 x 5.9 x 1.1mm
Transistor MaterialSi
Typical Turn-On Delay Time9 (Q1) ns, 12 (Q2) ns
Height1.1mm
SeriesPowerTrench
Typical Turn-Off Delay Time21 ns, 38 ns
Maximum Operating Temperature+150 °C
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1100 In stock for delivery within 3 working days
HK$7.693
Price Each (In a Pack of 10)
10 - 40
HK$7.693
50 +
HK$6.405
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Product overview and Technical data sheets
  • RS Components

    Statement of conformity


    This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
    RS Stock No. 864-8363
    Name Fairchild FDMS3660AS Dual N-channel MOSFET, 56 A, 130 A, 30 V PowerTrench, 8-Pin Power 56
    Manufacturer/Brand Name Fairchild Semiconductor
    Mfr. Part No. FDMS3660AS
    The foregoing information relates to product sold on, or after, the date shown below.
    RS COMPONENTS
    Date Jul 21, 2017
    RS Components Ltd, Suite 1601, Level 16, Tower 1, Kowloon Commerce Centre, 51 Kwai Cheong Road, Kwai Chung, Hong Kong
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