Fairchild FDMS3669S Dual N-channel MOSFET, 24 A, 60 A, 30 V, 8-Pin Power 56
- RS Stock No. 864-8360
- Manufacturer Fairchild Semiconductor
- Mfr. Part No. FDMS3669S
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer an increase in system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and a soft reverse recovery body diode, which contribute towards fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
|Maximum Continuous Drain Current||24 A, 60 A|
|Maximum Drain Source Voltage||30 V|
|Maximum Drain Source Resistance||7.1 mΩ, 14.5 mΩ|
|Minimum Gate Threshold Voltage||1.1V|
|Maximum Gate Source Voltage||±12 (Q2) V, ±20 (Q1) V|
|Package Type||Power 56|
|Mounting Type||Surface Mount|
|Maximum Power Dissipation||2.2 W, 2.5 W|
|Dimensions||5 x 5.9 x 1.1mm|
|Typical Turn-On Delay Time||7 (Q2) ns, 9 (Q1) ns|
|Minimum Operating Temperature||-55 °C|
|Typical Gate Charge @ Vgs||17 nC @ 10 V (Q1), 24 nC @ 10 V (Q2)|
|Typical Input Capacitance @ Vds||1205 pF@ 15 V, 1469 pF@ 15 V|
|Typical Turn-Off Delay Time||20 ns, 24 ns|
|Maximum Operating Temperature||+150 °C|
|Number of Elements per Chip||2|
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Statement of conformity
|Fairchild FDMS3669S Dual N-channel MOSFET, 24 A, 60 A, 30 V, 8-Pin Power 56|
|Date||Jan 21, 2017|
RS Update Revision Language