Fairchild Semiconductor
      Fairchild FDMS3669S Dual N-channel MOSFET, 24 A, 60 A, 30 V, 8-Pin Power 56
      Product Details

      PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

      PowerTrench® MOSFETs are optimised power switches that offer an increase in system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and a soft reverse recovery body diode, which contribute towards fast switching of synchronous rectification in AC/DC power supplies.
      The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
      The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

      MOSFET Transistors, Fairchild Semiconductor

      Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
      Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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      Channel TypeN
      Maximum Continuous Drain Current24 A, 60 A
      Maximum Drain Source Voltage30 V
      Maximum Drain Source Resistance7.1 mΩ, 14.5 mΩ
      Minimum Gate Threshold Voltage1.1V
      Maximum Gate Source Voltage±12 (Q2) V, ±20 (Q1) V
      Package TypePower 56
      Mounting TypeSurface Mount
      Pin Count8
      Transistor ConfigurationSeries
      Channel ModeEnhancement
      CategoryPower MOSFET
      Maximum Power Dissipation2.2 W, 2.5 W
      Number of Elements per Chip2
      Typical Turn-Off Delay Time20 ns, 24 ns
      Minimum Operating Temperature-55 °C
      Maximum Operating Temperature+150 °C
      Typical Gate Charge @ Vgs17 nC @ 10 V, 24 nC @ 10 V
      Typical Input Capacitance @ Vds1205 pF@ 15 V, 1469 pF@ 15 V
      Typical Turn-On Delay Time7 (Q2) ns, 9 (Q1) ns
      Transistor MaterialSi
      Dimensions5 x 5.9 x 1.1mm
      Select all
      1225 In stock for delivery within 3 working days
      Price Each (In a Pack of 25)
      25 - 100
      125 +
      Real time qty checker
      *price indicative
      Packaging Options:
      What is Production Packaging?
      Components are supplied in the original manufacturer's packaging, ready for insertion into your machinery. Allowing you to reduce waste and improve production efficiency.
      Product overview and Technical data sheets
      • RS Components

        Statement of conformity

        This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
        RS Stock No. 864-8360
        Name Fairchild FDMS3669S Dual N-channel MOSFET, 24 A, 60 A, 30 V, 8-Pin Power 56
        Manufacturer/Brand Name Fairchild Semiconductor
        Mfr. Part No. FDMS3669S
        The foregoing information relates to product sold on, or after, the date shown below.
        Date Apr 26, 2017
        RS Components Ltd, Suite 1601, Level 16, Tower 1, Kowloon Commerce Centre, 51 Kwai Cheong Road, Kwai Chung, Hong Kong
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