Dual N-Channel MOSFET Transistor, 60 A, 130 A, 30 V, 8-Pin Power 56 Fairchild FDMS3604AS
- RS Stock No.:
- 759-9614
- Mfr. Part No.:
- FDMS3604AS
- Manufacturer:
- Fairchild Semiconductor
Discontinued product
- RS Stock No.:
- 759-9614
- Mfr. Part No.:
- FDMS3604AS
- Manufacturer:
- Fairchild Semiconductor
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 60 A, 130 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | Power 56 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 4 mΩ, 10.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 2.2 W, 2.5 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 6mm |
| Length | 5mm |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V, 47 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 1.05mm |