N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3
- RS Stock No.:
- 134-9160
- Mfr. Part No.:
- SIR668DP-T1-RE3
- Manufacturer:
- Vishay
9000 In stock for delivery within 3 working days
Added
Price Each (On a Reel of 3000)
HK$10.117
| Units | Per unit | Per Reel* |
| 3000 - 3000 | HK$10.117 | HK$30,351.00 |
| 6000 - 9000 | HK$9.915 | HK$29,745.00 |
| 12000 + | HK$9.717 | HK$29,151.00 |
| *price indicative | ||
- RS Stock No.:
- 134-9160
- Mfr. Part No.:
- SIR668DP-T1-RE3
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 65 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | PowerPAK SO-8 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 5.05 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 104 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 6.25mm |
| Width | 5.26mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 1.12mm |
| Forward Diode Voltage | 1.1V |