N-Channel MOSFET, 100 A, 60 V, 8-Pin SO Vishay SIR626DP-T1-RE3
- RS Stock No.:
- 134-9158
- Mfr. Part No.:
- SIR626DP-T1-RE3
- Manufacturer:
- Vishay
Discontinued product
- RS Stock No.:
- 134-9158
- Mfr. Part No.:
- SIR626DP-T1-RE3
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SO |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 2.6 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 104 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 68 nC @ 10 V |
| Length | 6.25mm |
| Width | 5.26mm |
| Series | TrenchFET |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.1V |
| Height | 1.12mm |