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Bipolar Transistors

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Description Price Dimensions Height Length Maximum Base Emitter Saturation Voltage Maximum Collector Base Voltage Maximum Collector Emitter Saturation Voltage Maximum Collector Emitter Voltage Maximum DC Collector Current Maximum Emitter Base Voltage Maximum Operating Temperature Maximum Power Dissipation Minimum DC Current Gain Minimum Operating Temperature Mounting Type
RS Stock No. 714-6756
Mfr. Part No.BUX87
HK$5.33
Each (In a Pack of 5)
10.8 x 7.8 x 2.7mm 10.8mm 7.8mm 1 V 1000 V 1 V 450 V 500 mA 5 V +150 °C 40 W 12 -65 °C Through Hole
RS Stock No. 102-4117
Mfr. Part No.BUX87
HK$3.186
Each (In a Tube of 50)
10.8 x 7.8 x 2.7mm 10.8mm 7.8mm 1 V 1000 V 1 V 450 V 500 mA 5 V +150 °C 40 W 12 -65 °C Through Hole

Bipolar Transistors

The Bipolar junction transistor is designed in circuits as amplifier, driver or signal switch. The bipolar transistor is a discrete semiconductor manufactured in NPN and PNP types or polarities. The basic function of a bipolar transistor is to amplify current. The amount of current through the base terminal controls the current flow between the collector and emitter terminals of the transistor. The forward current amplification is called the current-gain of the transistor. A bipolar transistor can also function as a switch. When the transistor is driven into saturation or turn-on mode, this enables high current conduction from the collector to the emitter for the NPN type. In opposite biasing conditions, then the transistor is in turn-off mode with very little collector cut-off current passes through. Bipolar transistor is ideally suited for high frequency switching. Technology innovations continuously introduce energy efficiency at higher voltages, establishing high power with low power losses. A small signal transistor has even lower saturation voltage. The reduction in power dissipation allows ever smaller surface mount transistor packages.