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Bipolar Transistors

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Description Price Maximum DC Collector Current Maximum Collector Emitter Voltage Maximum Collector Base Voltage Dimensions Height Length Maximum Base Emitter Saturation Voltage Maximum Collector Emitter Saturation Voltage Maximum Emitter Base Voltage Maximum Operating Frequency Maximum Operating Temperature Maximum Power Dissipation Minimum DC Current Gain Mounting Type
RS Stock No. 805-1110
Mfr. Part No.2N6517CTA
HK$0.591
Each (In a Pack of 100)
600 mA 400 V 400 V 4.58 x 3.86 x 4.58mm 4.58mm 4.58mm 0.9 V 1 V 6 V 200 MHz +150 °C 625 mW 15 Through Hole
RS Stock No. 805-1116
Mfr. Part No.2N6517BU
HK$0.528
Each (In a Pack of 100)
500 mA 350 V 350 V 4.58 x 3.86 x 4.58mm 4.58mm 4.58mm 0.9 V 1 V 6 V 200 MHz +150 °C 625 mW 15 Through Hole
New
RS Stock No. 146-2110
Mfr. Part No.2N6517CTA
HK$0.208
Each (On a Tape of 2000)
600 mA 400 V 400 V 4.58 x 3.86 x 4.58mm 4.58mm 4.58mm 0.9 V 1 V 6 V 200 MHz +150 °C 625 mW 15 Through Hole
RS Stock No. 805-1129
Mfr. Part No.2N6517TA
HK$0.489
Each (In a Pack of 100)
500 mA 350 V 350 V 4.58 x 3.86 x 4.58mm 4.58mm 4.58mm 0.9 V 1 V 6 V 200 MHz +150 °C 625 mW 15 Through Hole

Bipolar Transistors

The Bipolar junction transistor is designed in circuits as amplifier, driver or signal switch. The bipolar transistor is a discrete semiconductor manufactured in NPN and PNP types or polarities. The basic function of a bipolar transistor is to amplify current. The amount of current through the base terminal controls the current flow between the collector and emitter terminals of the transistor. The forward current amplification is called the current-gain of the transistor. A bipolar transistor can also function as a switch. When the transistor is driven into saturation or turn-on mode, this enables high current conduction from the collector to the emitter for the NPN type. In opposite biasing conditions, then the transistor is in turn-off mode with very little collector cut-off current passes through. Bipolar transistor is ideally suited for high frequency switching. Technology innovations continuously introduce energy efficiency at higher voltages, establishing high power with low power losses. A small signal transistor has even lower saturation voltage. The reduction in power dissipation allows ever smaller surface mount transistor packages.